BUK765R2 N-Channel TrenchMOS FET – 75A Automotive Power MOSFET for ECU Repair & Power Switching

The BUK765R2 is a standard-level N-channel enhancement mode Field-Effect Transistor (FET) utilizing advanced TrenchMOS technology. Packaged in a surface-mount D2PAK (TO-263) housing, this device is specifically designed and qualified to meet the rigorous demands of automotive critical applications, making it a staple component for ECU repairs and power management systems.

This MOSFET offers a maximum drain-source voltage (VDS) of 40V, providing a safe operating margin for 12V automotive electrical systems. It is capable of handling a continuous drain current (ID) of up to 75A at 25°C, with a peak current rating that supports high inrush loads from motors and solenoids. The device features a typical on-state resistance (RDS(on)) of just 4.4 mΩ (max 5.2 mΩ at 10V), which minimizes conduction losses and ensures efficient power delivery for high-current applications.

Engineered for reliability in harsh under-hood environments, the BUK765R2 is rated for operation over a wide temperature range from -55°C to +175°C. It is fully AEC-Q101 compliant, guaranteeing it meets the stringent reliability standards required for automotive use. The robust design includes 100% avalanche testing, ensuring it can withstand energy spikes and transients common in automotive inductive loads.

This versatile component is an ideal choice for a wide range of automotive applications, including engine control units (ECUs), power switches, DC-DC converters, motor drives, and solenoid drivers. Its proven reliability and performance make it a commonly used and highly sought-after component for electronic repairs and new designs in the automotive aftermarket.